腾讯会议：956-776-913，会议密码：260410

邀请人：赵继民  研究员

联系人：万   源  研究员

　　　　汪非凡 副研究员

　　　　田春璐  cltian@iphy.ac.cn

主办方：中国科学院物理研究所、松山湖材料实验室

报告人简介
Prof. Claudio Giannetti is Full Professor of Condensed Matter Physics at Università Cattolica del Sacro Cuore, where he also serves as Dean of the Faculty of Mathematical, Physical and Natural Sciences and Director of the Interdisciplinary Laboratories for Advanced Materials Physics. His research focuses on controlling non-thermal states in quantum materials using light and developing advanced time-resolved spectroscopic techniques to study coherence and dynamics at the quantum level. He has authored over 100 publications in leading journals such as Science, Nature Physics, and Physical Review Letters and he has been leader of several national and international research projects aimed at investigated exotic materials driven out-of-equilibrium.

报告摘要
Controlling electronic quantum coherence in solids at ambient conditions is a long-sought target in condensed matter physics. Unfortunately, the quantum-coherent nature of electronic excitations in materials is usually washed out on extremely fast timescales as a consequence of interactions with incoherent fluctuations in the environment. Current quantum computing technology is therefore based on superconducting devices operating at extremely low temperatures (<20 mK) to preserve the quantum properties for the timescales necessary to measure the output of logic operations.

In this talk, we will present and discuss strategies to control the insulator-to-metal transition in Mott materials, with specific focus on the paradigmatic Mott insulator V2O3. We will emphasize the current attempts in controlling the Mott switching dynamics via the application of external voltage and electromagnetic pulses and we will address the possibility of achieving quantum coherent control of the transition dynamics. The possibility of implementing ultrafast quantum logic operations at ambient temperature will be discussed.

References:
[1] A. Milloch et al. Mott resistive switching initiated by topological defects. Nature Communications 15 (1), 9414 (2024).
[2] A. Milloch et al. Mott materials: unsuccessful metals with a bright future. npj Spintronics 2 (1), 49 (2024).
[3] P. Franceschini et al. Coherent control of the orbital occupation driving the insulator-to-metal Mott transition in V2O3. Physical Review B 107 (16), L161110 (2023).