University of Cambridge

报告摘要:

Two dimensional (2D) semiconductors, specifically monolayer transition metal dichalcogenides (TMDs), have attracted tremendous interest due to their fundamental merits in transistor scaling. However, the main challenge for realizing high performance field effect transistors (FETs) on monolayer TMDs is that the atomically thin TMDs are very sensitive to any perturbation at the metal/semiconductor and semiconductor/dielectric interfaces. In this talk, I will introduce our work on realizing clean van der Waals contacts for FETs on atomically thin TMDs [1,2]. Using scanning transmission electron microscopy imaging and X-ray photoemission spectroscopy, we show that the atomically sharp metal/semiconductor interfaces with no detectable chemical interaction between the metals and TMDs are preferred. I will also introduce our recent work on clean van der Waals contacts for spin valve devices [3]. Further, I will discuss our recent work on investigating how the interface interactions between monolayer TMDs and dielectrics influence the device performance [4].

[1] Nature, 568, 70–74 (2019).

[2] Nature 610, 61–66 (2022).

[3] Nature Electronics, 8, 215–221 (2025).

[4] Nature Electronics, accepted.

报告人简介:

Dr Yan Wang received her PhD from University of Cambridge in 2021 and become an independent PI at University of Cambridge in 2024. She is a research fellow at St John’s College at Cambridge. Her research focuses on developing ultra-low power electronics based on two dimensional (2D) materials. She develops innovative methods to study atomic interfaces using imaging, spectroscopic, and electronic techniques, leveraging these approaches to investigate how the interfaces of 2D materials affect the overall device performance.

邀请人：杜罗军（82647052）

报告地点：物理所B楼II段412会议室