Division of Solid State Physics, Lund University

报告摘要
I will report our recent studies of spin physics and spin-correlation phenomena in semiconductor quantum dots. The devices were fabricated from InGaAs/InP semiconductor heterostructures and from InSb semiconductor nanowires. Spin states, effective g-factors, spin-orbit interaction energy, and exchange energy were measured for the fabricated quantum dots. We also studied strong correlation phenomena in the fabricated quantum dot devices. In addition to both odd-number electron and even-number electron Kondo effects, we observed a new spin-correlation-induced phenomenon in InSb quantum dot devices, namely the conductance blockade at the degeneracy of two orbital states with the same spin. We attribute this conductance blockade to the effect of electron interference between two equivalent, strongly correlated, many-body states in the quantum dots.

个人简介
报告人于1985年在瑞典Lund 大学获得物理学博士学位，现为Lund 大学固体物理系教授，Lund 大学纳米结构联合体电子输运研究组负责人。徐洪起教授至今已是30多个国际重要学术期刊的审稿人 (包括PRL， APL， Nature Materials, Nano Letters等)，并担任瑞典研究局工程物理委员会委员、欧盟科技专家等职务，他还是数个国家和地区研究项目评审专家，于2004 年获中科院海外知名学者称号。他的主要研究方向包括：半导体纳米结构中的量子输运与强关联现象、纳米电子器件、自旋输运和自旋电子学、光子器件和光子晶体、光与物质的相互作用，表面等离子体光学等。

联系人：曹则贤 研究员（826489136）